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Poly-Ge near-infrared photodetectors for silicon based optoelectronics

Authors :
G. Masini
Lorenzo Colace
Gaetano Assanto
Masini, G
Colace, Lorenzo
Assanto, Gaetano
Publication Year :
2003

Abstract

In this paper we review the recent achievements of germanium on silicon technologies for the fabrication of near infrared photodetectors.

Subjects

Subjects :
Fabrication
Materials science
Silicon
business.industry
Hybrid silicon laser
Near-infrared spectroscopy
ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION
Photodetector
chemistry.chemical_element
Germanium
Vacuum deposition
chemistry
Chemical-mechanical planarization
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
business

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....2b2a39ebd08bc88a428f3404ff8eb7df

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