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Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

Authors :
Joan Daniel Prades
Andreas Waag
Jan Gülink
Hutomo Suryo Wasisto
Universitat de Barcelona
Source :
Applied Physics Reviews, Dipòsit Digital de la UB, Universidad de Barcelona, Recercat. Dipósit de la Recerca de Catalunya, instname, Applied Physics Reviews 6, 041315 (2019); https://doi.org/10.1063/1.5096322--1931-9401
Publication Year :
2019

Abstract

Gallium Nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting and ubiquitous white light sources has developed around the inception of the Nobel-price-winning blue GaN LEDs. Today GaN optoelectronics is developing beyond lighting, leading to new and innovative devices, e.g. for micro-displays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (microLEDs and nanoLEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN microLEDs with silicon microelectronics in a fully hybrid approach. GaN LED technology today is even spreading into the realm of display technology, which has been occupied by organic LED (OLED) and liquid crystal display (LCD) for decades. In this review, the technological transition towards GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art.

Details

ISSN :
19319401
Database :
OpenAIRE
Journal :
Applied Physics Reviews
Accession number :
edsair.doi.dedup.....2b1b96320d5caebdf522df7477a7ac9d
Full Text :
https://doi.org/10.1063/1.5096322