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Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm

Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm

Authors :
Ivo Rendina
Luigi Moretti
M. Iodice
Luigi Sirleto
Mariano Gioffrè
Giuseppe Coppola
Maurizio Casalino
Casalino, M
Sirleto, L
Moretti, Luigi
Gioffrè, M
Coppola, G
Iodice, M
Rendina, I.
Source :
Fiber and Integrated Optics. 29:85-95
Publication Year :
2010
Publisher :
Informa UK Limited, 2010.

Abstract

In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and its working principle is based on the internal photo-emission effect. A comparison between a Schottky diode (Al/Si or Cu/Si) and the Schottky diode fed on a high-reflectivity Bragg mirror is carried out. Considering Al as Schottky metal, no difference in responsivity is obtained; considering Cu as Schottky metal, a three-fold responsivity improvement is experimentally demonstrated.

Details

ISSN :
10964681 and 01468030
Volume :
29
Database :
OpenAIRE
Journal :
Fiber and Integrated Optics
Accession number :
edsair.doi.dedup.....2b19c2393b1bd8e83bb9c8214f9f887a
Full Text :
https://doi.org/10.1080/01468031003596861