Back to Search
Start Over
Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm
Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm
- Source :
- Fiber and Integrated Optics. 29:85-95
- Publication Year :
- 2010
- Publisher :
- Informa UK Limited, 2010.
-
Abstract
- In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and its working principle is based on the internal photo-emission effect. A comparison between a Schottky diode (Al/Si or Cu/Si) and the Schottky diode fed on a high-reflectivity Bragg mirror is carried out. Considering Al as Schottky metal, no difference in responsivity is obtained; considering Cu as Schottky metal, a three-fold responsivity improvement is experimentally demonstrated.
- Subjects :
- Materials science
Silicon
business.industry
Schottky barrier
Schottky diode
Bragg's law
Photodetector
chemistry.chemical_element
Metal–semiconductor junction
Distributed Bragg reflector
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Responsivity
Optics
chemistry
Optoelectronics
business
Subjects
Details
- ISSN :
- 10964681 and 01468030
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Fiber and Integrated Optics
- Accession number :
- edsair.doi.dedup.....2b19c2393b1bd8e83bb9c8214f9f887a
- Full Text :
- https://doi.org/10.1080/01468031003596861