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High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors
- Source :
- Thin solid films, 636, 188-192. Elsevier
- Publication Year :
- 2017
-
Abstract
- Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are mainly caused by the coexistence of relaxor and antiferroelectric-like behaviors. The recoverable energy-storage density of 12.03, 12.51 and 12.74 J/cm3 and energy-storage efficiency of 86.50, 88.14 and 88.44%, respectively, for the PLZT(001), PLZT(011) and PLZT(111) thin films measured at 1000 kV/cm. The high energy density and high efficiency indicate that the relaxor epitaxial PLZT(111) thin film is a promising candidate for high pulsed power capacitors.
- Subjects :
- Materials science
Oxide
02 engineering and technology
Pulsed power
Epitaxy
01 natural sciences
Pulsed laser deposition
law.invention
chemistry.chemical_compound
law
0103 physical sciences
Materials Chemistry
Antiferroelectricity
Thin film
010302 applied physics
business.industry
Metals and Alloys
Surfaces and Interfaces
021001 nanoscience & nanotechnology
22/4 OA procedure
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Capacitor
chemistry
Optoelectronics
0210 nano-technology
business
Single crystal
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 636
- Database :
- OpenAIRE
- Journal :
- Thin solid films
- Accession number :
- edsair.doi.dedup.....2ab0febe7e498fa0429988ebd9736deb