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Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength
- Source :
- Nanomaterials, Volume 9, Issue 3, Nanomaterials, Vol 9, Iss 3, p 416 (2019)
- Publication Year :
- 2019
- Publisher :
- MDPI, 2019.
-
Abstract
- An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the &mu<br />W range. The 1-&mu<br />m2 transistor is tuned to involve in the transport only those electrons lying in the Er-O states. The spectrally resolved photocurrent is characterized by the typical absorption line of erbium and the linear dependence of the signal over the impinging power demonstrates that the Er-doped transistor is operating far from saturation. The relatively small number of estimated photoexcited atoms (&asymp<br />4 &times<br />10 4 ) makes Er-dpoed silicon potentially suitable for designing resonance-based frequency selective single photon detectors at 1550 nm.
- Subjects :
- Materials science
Silicon
General Chemical Engineering
chemistry.chemical_element
Physics::Optics
02 engineering and technology
photocurrent
01 natural sciences
silicon transistor
Article
law.invention
lcsh:Chemistry
Erbium
law
0103 physical sciences
General Materials Science
010302 applied physics
Photocurrent
business.industry
Transistor
Doping
021001 nanoscience & nanotechnology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Supercontinuum
erbium
Wavelength
Ion implantation
lcsh:QD1-999
chemistry
0210 nano-technology
Telecommunications
business
Subjects
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 9
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- Nanomaterials
- Accession number :
- edsair.doi.dedup.....2aa46dfdd58c69baf9d707d0d9636524