Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm

Authors :: Kei May Lau
Craig P. Allford
Samuel Shutts
Zhibo Li
Bei Shi
Peter Michael Smowton
Wei Luo
Source :: 2019 IEEE Photonics Conference (IPC)
Publication Year :: 2019
Publisher :: IEEE, 2019.
Abstract: Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.

Subjects :: Materials science
Silicon
chemistry
business.industry
law
Quantum dot
Optoelectronics
chemistry.chemical_element
business
Laser
Absorption (electromagnetic radiation)
law.invention

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