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Study of Thermal Transport Anisotropy in Porous Silicon Systems by Raman Technique

Authors :
Ali Belarouci
Vladimir Lysenko
Mykola Isaiev
O. Didukh
INL - Nanophotonique (INL - Photonique)
Institut des Nanotechnologies de Lyon (INL)
École Centrale de Lyon (ECL)
Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL)
Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Belarouci, Ali
Source :
8th International Conference Nanomaterials: Application & Properties (NAP), 8th International Conference Nanomaterials: Application & Properties (NAP), Sep 2018, Zatoka, Uruguay
Publication Year :
2018
Publisher :
HAL CCSD, 2018.

Abstract

We have investigated the thermal transport in anisotropic nanostructured materials. Particularly, porous silicon and silicon nanowires arrays have been considered in this work. For thermal conductivity evaluation Raman technique has been applied. The thermal transport anisotropy is more pronounce in silicon nanowires array than in porous silicon. Yet, the in-plane and cross-plane thermal conductivities of porous silicon differ approximately in twice. Both values are in a good agreement with the literature.

Details

Language :
English
Database :
OpenAIRE
Journal :
8th International Conference Nanomaterials: Application & Properties (NAP), 8th International Conference Nanomaterials: Application & Properties (NAP), Sep 2018, Zatoka, Uruguay
Accession number :
edsair.doi.dedup.....2a41aa7a3d9b1e0084a3c56e7d0b90d8