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SiC and GaN Devices With Cryogenic Cooling
- Source :
- IEEE Open Journal of Power Electronics, Vol 2, Pp 315-326 (2021)
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.
- Subjects :
- Wide bandgap device
device characterization
Materials science
Physics::Instrumentation and Detectors
business.industry
Band gap
GaN HEMT
Astrophysics::Instrumentation and Methods for Astrophysics
cryogenic temperature
Gallium nitride
Cryogenics
Semiconductor device
TK1-9971
Switching time
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
cryogenically-cooled converter
Power electronics
Silicon carbide
SiC MOSFET
Optoelectronics
Junction temperature
Electrical engineering. Electronics. Nuclear engineering
business
Subjects
Details
- ISSN :
- 26441314
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- IEEE Open Journal of Power Electronics
- Accession number :
- edsair.doi.dedup.....29b39daee8fd06088dbe85745cfc0261