Scaling properties of silicon nanowire and carbon-nanotube FETs

In this work we investigate the performance of silicon nanowire and carbon-nanotube FETs at their extreme miniaturization limits. The model self-consistently solves the Schroedinger and Poisson equations using the Quantum Transmitting Boundary Method (QTBM) formalism. We compare the subthreshold slope, the drain-induced barrier lowering and the Ion/Ioff ratio versus diameter and gate length. The performance comparison demonstrates that the nanowire FET provides a better scaling trend at very low size despite its weaker gate control on the device electrostatics.