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Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Authors :
M. D. Rossell
B. Pelissier
B. Hollander
G. Van Tendeloo
Catherine Dubourdieu
Nevine Rochat
Erwan Rauwel
F. Ducroquet
Laboratoire des matériaux et du génie physique (LMGP )
Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Institut für Schichten und Grenzflächen (ISG1) and Center of Nanoelectronics Systems for Information Technology (ISG1)
Forschungszentrum Jülich GmbH | Centre de recherche de Juliers
Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association
CEA Grenoble, DRT/DPTS/SCPIO/LCPO (CEA GRENOBLE)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Institut de Microélectronique, Electromagnétisme et Photonique (IMEP)
Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)
Electron Microscopy for Material Resaerch (EMAT) (EMAT)
University of Antwerp (UA)
Laboratoire des technologies de la microélectronique (LTM)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Source :
Applied physics letters 89, 012902 (2006). doi:10.1063/1.2216102, Applied physics letters, Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2006, 89, pp.012902, Applied Physics Letters, 2006, 89, pp.012902
Publication Year :
2006
Publisher :
American Institute of Physics, 2006.

Abstract

Addition of yttrium in HfO(2) thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO(2) is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH(3). (c) 2006 American Institute of Physics.

Details

Language :
English
ISSN :
00036951
Database :
OpenAIRE
Journal :
Applied physics letters 89, 012902 (2006). doi:10.1063/1.2216102, Applied physics letters, Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2006, 89, pp.012902, Applied Physics Letters, 2006, 89, pp.012902
Accession number :
edsair.doi.dedup.....292be49e5600e8b2d298efd7ef9e43b7
Full Text :
https://doi.org/10.1063/1.2216102