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Epitaxial ferroelectric oxide thin films for optical applications

Authors :
Valanoor Nagarajan
Brahim Dkhil
Yurong Yang
Charles Paillard
Daniel Sando
Laurent Bellaiche
School of Materials Science and Engineering
University of New South Wales [Sydney] (UNSW)
National Laboratory of Solid State Microstructures [Nanjing University] (LSSMS)
Nanjing University (NJU)
University of Arkansas [Fayetteville]
Laboratoire Structures, Propriétés et Modélisation des solides (SPMS)
Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)
Source :
Applied Physics Reviews, Applied Physics Reviews, AIP Publishing, 2018, 5 (4), pp.041108. ⟨10.1063/1.5046559⟩
Publication Year :
2018
Publisher :
AIP Publishing, 2018.

Abstract

Ferroelectrics are non-centrosymmetric crystalline materials that possess a spontaneous polarization that can be switched by an electric field. The electric-field-dependent optical response of these materials makes them important for optical devices, such as modulators or beam deflectors. In the inexorable drive to miniaturization, the concept of integrated thin film optical devices has led to the incorporation of ferroelectric thin films on single-crystal substrates. These structures have appealing electro-optic modulation characteristics, interesting strain-dependent bandgaps and refractive index, as well as promising possibilities for solar harvesting. Here, we review the work on epitaxial ferroelectric (FE) films for optical applications. We first show that FE thin film materials are attractive for integrated electro-optic modulators and then show that epitaxial strain can be used to enhance the FE and optical functionality of films. Next, we describe some of the photovoltaic functionality of FE thin film materials' systems and conclude the review by highlighting some thin-film devices that exploit the aforementioned optical effects.

Details

ISSN :
19319401
Volume :
5
Database :
OpenAIRE
Journal :
Applied Physics Reviews
Accession number :
edsair.doi.dedup.....28bac55383c9b3ecf036f067e5e720df
Full Text :
https://doi.org/10.1063/1.5046559