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Protection schemes for critical surface in vacuum environments
- Source :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1319-1324
- Publication Year :
- 2005
- Publisher :
- American Vacuum Society, 2005.
-
Abstract
- This article presents a study of particle formation during vacuum pump down and methods that can be incorporated to protect critical surfaces (like semiconductor wafers or masks) from those particles. Particle formation during pump down was reexamined with temperature measurements. Particles were intentionally produced with hard pump down for studying protection schemes. For the first step, a face-down approach for a critical surface was used to investigate the effect of protection from particle contamination. It was very effective to hold a critical surface face down for protection with the use of high gravitational settling velocity in vacuum environment. However, the face down approach did not sufficiently protect the critical surface. For the second step, a bottom protective plate was introduced below the critical surface to improve the protection efficiency. The bottom plate played a great role in protection of the critical surface with preventing particle formation near the critical surface by keeping the surrounding gas temperature high enough to avoid particle formation as well as with potential blocking of incoming particles toward the critical surface. Higher gas temperature intrinsically avoids formation of residue particles by the condensation process during pump down.
- Subjects :
- Particle contamination
Materials science
business.industry
Condensation process
Surfaces and Interfaces
Mechanics
Condensed Matter Physics
Temperature measurement
Surfaces, Coatings and Films
law.invention
Critical surface
Optics
Semiconductor
Settling
law
Vacuum pump
Wafer
business
Elektrotechnik
Subjects
Details
- ISSN :
- 15208559 and 07342101
- Volume :
- 23
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Accession number :
- edsair.doi.dedup.....28ba26396cb173370ff24a44770fd775