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One‐Step Sixfold Cyanation of Benzothiadiazole Acceptor Units for Air‐Stable High‐Performance n‐Type Organic Field‐Effect Transistors

Authors :
Martin Heeney
Byoungwook Park
Julianna Panidi
Thomas D. Anthopoulos
Joel Luke
Sooncheol Kwon
Kwanghee Lee
Panagiota Kafourou
Florian Glöcklhofer
Ji-Seon Kim
Luxi Tan
Jehan Kim
EPSRC
The Royal Society
Kaust
EPRSC
National Research Foundation of Korea (NRF)
Engineering and Physical Sciences Research Council
CSEM Brasil
Source :
Angewandte Chemie (International Ed. in English)
Publication Year :
2021
Publisher :
Wiley, 2021.

Abstract

Reported here is a new high electron affinity acceptor end group for organic semiconductors, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT). An n‐type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a sixfold nucleophilic substitution with cyanide on a fluorinated precursor, itself prepared by a direct arylation approach. This one‐step chemical modification significantly impacted the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n‐type semiconductor. The electron‐deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n‐type organic field‐effect transistors (OFETs). Solution‐processed OFETs based on TCNBT IDT exhibited a charge‐carrier mobility of up to μ e≈0.15 cm2 V−1 s−1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.<br />A new strongly electron‐accepting end group, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT), has been prepared by a one‐step sixfold nucleophilic substitution reaction. Cyanation results in a significant enhancement of the electron affinity in comparison to the fluorinated analogue, and the material demonstrates promising n‐type performance in solution processed organic field‐effect transistors with excellent stability.

Details

ISSN :
15213773 and 14337851
Volume :
60
Database :
OpenAIRE
Journal :
Angewandte Chemie International Edition
Accession number :
edsair.doi.dedup.....282425323813e4a8c724d28db130277f