SEU-hardened storage cell validation using a pulsed laser

Authors :: Steven C. Moss
Michael Nicolaidis
T. Calin
Raoul Velazco
V.T. Tran
R. Koga
Stephen LaLumondiere
Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)
The Aerospace Corp. (THE AEROSPACE CORP.)
The Aerospace Corporation
Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)
Source :: IEEE Transactions on Nuclear Science, IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1996, Dec. 1996; 43(6) pt. 1, pp.2843-8. ⟨10.1109/23.556875⟩
Publication Year :: 1996
Publisher :: HAL CCSD, 1996.
Abstract: Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed unexpected latch-up and single-event upset phenomena. The investigations that identified their location show the existence of a topology-dependent dual node upset mechanism. Design solutions are suggested to avoid its occurrence.

Language :: English
ISSN :: 00189499
Database :: OpenAIRE
Journal :: IEEE Transactions on Nuclear Science, IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1996, Dec. 1996; 43(6) pt. 1, pp.2843-8. ⟨10.1109/23.556875⟩
Accession number :: edsair.doi.dedup.....2791e87b2438c2dc6d618794d19ac8d2

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