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Effective inelastic scattering cross-sections for background analysis in HAXPES of deeply buried layers
- Source :
- Applied Surface Science, Applied Surface Science, 2017, 402, pp.78. ⟨10.1016/j.apsusc.2017.01.046⟩, Applied Surface Science, Elsevier, 2017, 402, pp.78. ⟨10.1016/j.apsusc.2017.01.046⟩, Risterucci, P, Renault, O, Zborowski, C, Bertrand, D, Torres, A, Rueff, J-P, Ceolin, D, Grenet, G & Tougaard, S M 2017, ' Effective inelastic scattering cross-sections for background analysis in HAXPES of deeply buried layers ', Applied Surface Science, vol. 402, pp. 78-85 . https://doi.org/10.1016/j.apsusc.2017.01.046
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- International audience; Inelastic background analysis of HAXPES spectra was recently introduced as a powerful method to get access to the elemental distribution in deeply buried layers or interfaces, at depth up to 60 nm below the surface. However the accuracy of the analysis highly relies on suitable scattering cross-sections able to describe effectively the transport of photoelectrons through overlayer structures consisting of individual layers with potentially very different scattering properties. Here, we show that within Tougaard’s practical framework as implemented in the Quases-Analyze software, the photoelectron transport through thick (25–40 nm) multi-layer structures with widely different cross-sections can be reliably described with an effective cross-section in the form of a weighted sum of the individual cross-section of each layer. The high-resolution core-level analysis partly provides a guide for determining the nature of the individual cross-sections to be used. We illustrate this novel approach with the practical case of a top Al/Ti bilayer structure in an AlGaN/GaN power transistor device stack before and after sucessive annealing treatments. The analysis provides reliable insights on the Ti and Ga depth distributions up to nearly 50 nm below the surface.
- Subjects :
- Materials science
Hard X-ray photoemission
Annealing (metallurgy)
General Physics and Astronomy
Inelastic scattering cross-section
02 engineering and technology
Inelastic scattering
01 natural sciences
Spectral line
[SPI.MAT]Engineering Sciences [physics]/Materials
Overlayer
Optics
0103 physical sciences
Power semiconductor device
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[PHYS]Physics [physics]
010302 applied physics
Buried interface
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
business.industry
Scattering
Bilayer
Surfaces and Interfaces
General Chemistry
Photoelectric effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
Surfaces, Coatings and Films
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
0210 nano-technology
business
Background analysis
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 402
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi.dedup.....275daf6726b2d2cd521f9b8235894ff3