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Electronic and electrostatic properties of polar oxide nanostructures: MgO(111) islands on Au(111)
- Source :
- Physical Review B, Physical review. B, Condensed matter and materials physics (Online) 86 (2012): 205410. doi:10.1103/PhysRevB.86.205410, info:cnr-pdr/source/autori:Niklas Nilius,1, Stefania Benedetti,2 Yi Pan,1 Philipp Myrach,1 Claudine Noguera,3 Livia Giordano,4 Jacek Goniakowski3/titolo:Electronic and electrostatic properties of polar oxide nanostructures: MgO(111) islands on Au(111)/doi:10.1103%2FPhysRevB.86.205410/rivista:Physical review. B, Condensed matter and materials physics (Online)/anno:2012/pagina_da:205410/pagina_a:/intervallo_pagine:205410/volume:86, Physical Review B: Condensed Matter and Materials Physics (1998-2015), Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 86 (20), pp.205410. ⟨10.1103/PhysRevB.86.205410⟩, Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (20), pp.205410. ⟨10.1103/PhysRevB.86.205410⟩
- Publication Year :
- 2012
-
Abstract
- Using scanning tunneling microscopy and density functional theory (DFT), we have analyzed the local electronic properties of (111)-oriented MgO nanoislands on Au(111). Conductance and barrier-height measurements revealed substantial modulations in the electronic structure and electrostatic potential across the islands, with particularly high and low values for band onsets and surface potential occurring at the perimeter and in the island center, respectively. DFT calculations showed that MgO(111) monolayer structures exhibit a strongly reduced distance between the Mg${}^{\ensuremath{\delta}+}$ and O${}^{\ensuremath{\delta}\ensuremath{-}}$ plane as compared to bulk MgO, which in turn suppresses the polar character of the film. The spatial modulations in the electronic properties originate from gradual changes of the interface registry when approaching the island edges, driven by a small mismatch between the Au(111) and MgO(111) lattices. At the periphery of the islands, additional effects such as band shifts and low-lying electronic states are observed, which arise from the interplay of residual edge polarity and unsaturated chemical bonds. We expect that the peculiar edge properties of MgO(111) islands are decisive for the chemical behavior of the nanostructures.
- Subjects :
- CHIM/03 - CHIMICA GENERALE E INORGANICA
Nanostructure
Materials science
Condensed matter physics
Center (category theory)
Conductance
Nanotechnology
02 engineering and technology
Electronic structure
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Oxides, films
Chemical bond
law
0103 physical sciences
Monolayer
Density functional theory
Scanning tunneling microscope
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
010306 general physics
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 10980121 and 1550235X
- Database :
- OpenAIRE
- Journal :
- Physical Review B, Physical review. B, Condensed matter and materials physics (Online) 86 (2012): 205410. doi:10.1103/PhysRevB.86.205410, info:cnr-pdr/source/autori:Niklas Nilius,1, Stefania Benedetti,2 Yi Pan,1 Philipp Myrach,1 Claudine Noguera,3 Livia Giordano,4 Jacek Goniakowski3/titolo:Electronic and electrostatic properties of polar oxide nanostructures: MgO(111) islands on Au(111)/doi:10.1103%2FPhysRevB.86.205410/rivista:Physical review. B, Condensed matter and materials physics (Online)/anno:2012/pagina_da:205410/pagina_a:/intervallo_pagine:205410/volume:86, Physical Review B: Condensed Matter and Materials Physics (1998-2015), Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2012, 86 (20), pp.205410. ⟨10.1103/PhysRevB.86.205410⟩, Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (20), pp.205410. ⟨10.1103/PhysRevB.86.205410⟩
- Accession number :
- edsair.doi.dedup.....275ca6a3c728108a5d893572c38147e4
- Full Text :
- https://doi.org/10.1103/PhysRevB.86.205410