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Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films
- Source :
- IndraStra Global.
- Publication Year :
- 2010
-
Abstract
- Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ?5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ?4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase. � 2010 American Institute of Physics.
- Subjects :
- Manganese compounds
Photolithography
Materials science
Physics and Astronomy (miscellaneous)
Binding energy
Analytical chemistry
chemistry.chemical_element
Manganese
Indium
Electric conductivity
Electrical resistivity and conductivity
Indium compounds
Charge state
Core levels
Mn doped
Thin film
Oxide films
Three component
Tin oxides
Electrical resistivity
Charge (physics)
Charge compensation
Satellite peaks
Indium tin oxide
Indium Tin Oxide films
chemistry
Indium tin oxide thin films
Tin
Core level
Mn-doped
Mn concentrations
Titanium compounds
Bonding analysis
Subjects
Details
- Language :
- English
- ISSN :
- 23813652
- Database :
- OpenAIRE
- Journal :
- IndraStra Global
- Accession number :
- edsair.doi.dedup.....274ec21d84619477c5e7b5ff6a75ebc8