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Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells
- Source :
- ACS applied materialsinterfaces. 7(34)
- Publication Year :
- 2015
-
Abstract
- Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs' application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm(2)) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).
- Subjects :
- Materials science
Silicon
business.industry
Energy conversion efficiency
chemistry.chemical_element
Nanotechnology
Substrate (electronics)
Quantum dot solar cell
Graphene quantum dot
law.invention
chemistry
law
Solar cell
Optoelectronics
General Materials Science
Crystalline silicon
business
Layer (electronics)
Subjects
Details
- ISSN :
- 19448252
- Volume :
- 7
- Issue :
- 34
- Database :
- OpenAIRE
- Journal :
- ACS applied materialsinterfaces
- Accession number :
- edsair.doi.dedup.....26335ef9928882b0ea5dce9bd03aeafe