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Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements
- Source :
- Physical Review B. 102
- Publication Year :
- 2020
- Publisher :
- American Physical Society (APS), 2020.
-
Abstract
- Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune the types of tunneling process. By changing the bias voltage in a single device, we successively address the conventional direct tunneling, the excess current conduction through the mid-gap localized states, and the thermal excitation current conduction. These observations lead to a proper comparison of the bias dependent Fano factors. While the Fano factor is unity for the direct tunneling, it is pronouncedly reduced in the excess current region. Thus, we have succeeded in evaluating several types of conduction process with the Fano factor in a single junction.
- Subjects :
- Fano factor
Range (particle radiation)
Materials science
Condensed matter physics
ddc:530
Shot noise
Biasing
02 engineering and technology
530 Physik
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Thermal conduction
01 natural sciences
0103 physical sciences
Tunnel diode
010306 general physics
0210 nano-technology
Quantum tunnelling
Spin-½
Subjects
Details
- ISSN :
- 24699969 and 24699950
- Volume :
- 102
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi.dedup.....25e88deaa26bac52d3aef50014d73ae6