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Highly-ordered graphene for two dimensional electronics

Authors :
Xin Li
Claire Berger
E. H. Conrad
Tianbo Li
J. Hass
W. A. de Heer
Zhimin Song
Phillip N. First
R. Feng
C. A. Jeffrey
Publication Year :
2006

Abstract

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.<br />Submitted to Appl. Phys. Lett

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....22a51574fa384f39cc679ebcb2d16531