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Highly-ordered graphene for two dimensional electronics
- Publication Year :
- 2006
-
Abstract
- With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.<br />Submitted to Appl. Phys. Lett
- Subjects :
- 010302 applied physics
Condensed Matter - Materials Science
Materials science
Physics and Astronomy (miscellaneous)
Graphene
business.industry
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Semiconductor
law
Sic substrate
0103 physical sciences
Optoelectronics
Sublimation (phase transition)
Epitaxial graphene
Electronics
0210 nano-technology
business
Order of magnitude
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....22a51574fa384f39cc679ebcb2d16531