Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance

MLA

Martin S. Barbosa, et al. “Flexible Ion-Gated Transistors Making Use of Poly-3-Hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance.” Journal of Electronic Materials, vol. 49, June 2020, pp. 5302–07. EBSCOhost, https://doi.org/10.1007/s11664-020-08242-3.

APA

Martin S. Barbosa, Tian Lan, Clara Santato, & Zhaojing Gao. (2020). Flexible Ion-Gated Transistors Making Use of Poly-3-hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance. Journal of Electronic Materials, 49, 5302–5307. https://doi.org/10.1007/s11664-020-08242-3

Chicago

Martin S. Barbosa, Tian Lan, Clara Santato, and Zhaojing Gao. 2020. “Flexible Ion-Gated Transistors Making Use of Poly-3-Hexylthiophene (P3HT): Effect of the Molecular Weight on the Effectiveness of Gating and Device Performance.” Journal of Electronic Materials 49 (June): 5302–7. doi:10.1007/s11664-020-08242-3.