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Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond
- Source :
- Journal of Applied Physics, Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩, Journal of Applied Physics, American Institute of Physics, 2011, 109, pp.086106-1-3. ⟨10.1063/1.3581032⟩
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman technique is used in a steady state. Good agreement is found between the techniques. The thermal conductivity of the diamond is found to be 2200 W/m K, and the thermal boundary resistance to the III-N epi-structure is
- Subjects :
- 010302 applied physics
Materials science
business.industry
Thermal resistance
Wide-bandgap semiconductor
General Physics and Astronomy
Diamond
02 engineering and technology
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
[SPI.TRON]Engineering Sciences [physics]/Electronics
symbols.namesake
Thermal conductivity
0103 physical sciences
symbols
engineering
Interfacial thermal resistance
Optoelectronics
0210 nano-technology
Raman spectroscopy
business
Saturation (magnetic)
Molecular beam
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 109
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....2202c3704973650876b21843b74203db