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Inducing superconductivity in Weyl semimetal microstructures by selective ion sputtering

Authors :
Roni Ilan
Filip Ronning
Felix Flicker
Eric D. Bauer
Nityan Nair
Tobias Meng
Nirmal Ghimire
James Analytis
Philip J. W. Moll
Maja D. Bachmann
University of St Andrews. School of Physics and Astronomy
Source :
Science Advances, Science advances, vol 3, iss 5, Bachmann, MD; Nair, N; Flicker, F; Ilan, R; Meng, T; Ghimire, NJ; et al.(2017). Inducing superconductivity in Weyl semimetal microstructures by selective ion sputtering. Science Advances, 3(5). doi: 10.1126/sciadv.1602983. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/8gv3r5ss
Publication Year :
2017

Abstract

Novel ion beam–based method induces superconductivity in Weyl semimetal microstructures.<br />By introducing a superconducting gap in Weyl or Dirac semimetals, the superconducting state inherits the nontrivial topology of their electronic structure. As a result, Weyl superconductors are expected to host exotic phenomena, such as nonzero-momentum pairing due to their chiral node structure, or zero-energy Majorana modes at the surface. These are of fundamental interest to improve our understanding of correlated topological systems, and, moreover, practical applications in phase-coherent devices and quantum applications have been proposed. Proximity-induced superconductivity promises to allow these experiments on nonsuperconducting Weyl semimetals. We show a new route to reliably fabricate superconducting microstructures from the nonsuperconducting Weyl semimetal NbAs under ion irradiation. The significant difference in the surface binding energy of Nb and As leads to a natural enrichment of Nb at the surface during ion milling, forming a superconducting surface layer (Tc ~ 3.5 K). Being formed from the target crystal itself, the ideal contact between the superconductor and the bulk may enable an effective gapping of the Weyl nodes in the bulk because of the proximity effect. Simple ion irradiation may thus serve as a powerful tool for the fabrication of topological quantum devices from monoarsenides, even on an industrial scale.

Details

Language :
English
ISSN :
23752548
Volume :
3
Issue :
5
Database :
OpenAIRE
Journal :
Science Advances
Accession number :
edsair.doi.dedup.....2138c713ec8e66a0c8d919aec1336e4c
Full Text :
https://doi.org/10.1126/sciadv.1602983.