Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer

MLA

Hai Tao Zhang, et al. “Structure Design and Analysis of 2 Μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.” Applied Sciences, vol. 9, Jan. 2019, p. 162. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....2116e1466872f29f79c5238f067c4e5a&authtype=sso&custid=ns315887.

APA

Hai Tao Zhang, Zhipeng Liang, Ma Lei, An Ning, Wen Guanyu, Tianshu Gao, & Cunbo Fan. (2019). Structure Design and Analysis of 2 μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer. Applied Sciences, 9, 162.

Chicago

Hai Tao Zhang, Zhipeng Liang, Ma Lei, An Ning, Wen Guanyu, Tianshu Gao, and Cunbo Fan. 2019. “Structure Design and Analysis of 2 Μm InGaAsSb/AlGaAsSb Muti-Quantum Well Laser Diode with Carrier Blocking Layer.” Applied Sciences 9 (January): 162. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....2116e1466872f29f79c5238f067c4e5a&authtype=sso&custid=ns315887.