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The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties
- Source :
- IEEE journal of the Electron Devices Society 8, 457-464 (2020). doi:10.1109/JEDS.2020.2988630, IEEE Journal of the Electron Devices Society, Vol 8, Pp 457-464 (2020), IEEE Journal of the Electron Devices Society (2168-6734)
- Publication Year :
- 2020
- Publisher :
- RWTH Aachen University, 2020.
-
Abstract
- IEEE journal of the Electron Devices Society 8, 457-464 (2020). doi:10.1109/JEDS.2020.2988630<br />Published by IEEE, [New York, NY]
- Subjects :
- Electron mobility
Materials science
ddc:621.3
Transconductance
transconductance
02 engineering and technology
Dielectric
01 natural sciences
transit frequency
law.invention
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
microwave electronics
Electrical and Electronic Engineering
contact resistances
010302 applied physics
Other Electrical Engineering, Electronic Engineering, Information Engineering
business.industry
Graphene
Velocity saturation
Transistor
graphene
field-effect transistors
Saturation velocity
high frequency
021001 nanoscience & nanotechnology
Electronic, Optical and Magnetic Materials
maximum frequency of oscillation
621.3
Physical Sciences
Optoelectronics
Equivalent circuit
Nano Technology
lcsh:Electrical engineering. Electronics. Nuclear engineering
0210 nano-technology
business
lcsh:TK1-9971
Biotechnology
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- IEEE journal of the Electron Devices Society 8, 457-464 (2020). doi:10.1109/JEDS.2020.2988630, IEEE Journal of the Electron Devices Society, Vol 8, Pp 457-464 (2020), IEEE Journal of the Electron Devices Society (2168-6734)
- Accession number :
- edsair.doi.dedup.....20a9cff9ef0dec69342e6ed999b7a751
- Full Text :
- https://doi.org/10.18154/rwth-2020-07585