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Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2
- Publication Year :
- 2019
-
Abstract
- Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary contacts and thermal confinement. The filamentary contact is formed through an oxidized TiN layer on the bottom electrode, and thermal confinement is achieved using a monolayer semiconductor interface, three-atom thick MoS2. The former reduces the switching volume of the phase change material and yields a 70% reduction in reset current versus typical 150 nm diameter mushroom cells. The enhanced thermal confinement achieved with the ultra-thin (~6 {\AA}) MoS2 yields an additional 30% reduction in switching current and power. We also use detailed simulations to show that further tailoring the electrical and thermal interfaces of such PCM cells toward their fundamental limits could lead up to a six-fold benefit in power efficiency.
- Subjects :
- 010302 applied physics
Condensed Matter - Materials Science
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
02 engineering and technology
Applied Physics (physics.app-ph)
Physics - Applied Physics
021001 nanoscience & nanotechnology
01 natural sciences
7. Clean energy
Phase-change material
Phase-change memory
Semiconductor
0103 physical sciences
Electrode
Monolayer
Computer data storage
Thermal
Optoelectronics
0210 nano-technology
business
Electrical efficiency
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....1ffc073b8477bbf76140a05873687a34