Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Efficient charge storage media play a pivotal role in transistor‐based memories and thus are under intense research. In this work, the charge storage ability of type‐I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene‐based organic transistor with the quantum dots (QDs) integrated. The quantum well‐like energy band structure enables the QDs to directly confine either holes or electrons in the core, signifying a dielectric layer‐free nonvolatile memory. Especially, the QDs in this device can be charged by electrons using light illumination as the exclusive method. The electron charging process is ascribed to the photoexcitation process in the InP‐core and the hot holes induced. The QDs layer demonstrates an electron storage density of ≈5.0 × 1011 cm−2 and a hole storage density of ≈6.4 × 1011 cm−2. Resultingly, the output device shows a fast response speed to gate voltage (10 µs), large memory window (42 V), good retention (>4.0 × 104 s), and reliable endurance. This work suggests that the core/shell quantum dot as a kind of charge storage medium is of great promise for optoelectronic memories.
Type‐I InP/ZnS core/shell quantum dots are implanted into a pentacene organic transistor. The ambipolar charge storage ability and excellent optoelectronic property of the QDs enable the device to be optically programmed and electrically erased, signify a nonvolatile optoelectronic memory. The device demonstrates good retention, endurance, and fast response speed to the electric bias.