Annealing induced effect on the physical properties of ion-beam sputtered 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ ferroelectric thin films

This work reports thermal annealing induced effect on the structural, optical, chemical and ferroelectric properties of ion-beam sputtered lead-free ferroelectric 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ (0.5BZT–0.5BCT) thin films. X-ray diffraction studies reveal that the tetragonality increases with the annealing temperature (Ta), while photoluminescence and X-ray photoelectron spectroscopy studies confirm that this effect is associated with the annihilation of the oxygen vacancies as well as changes in the Ba2+ coordination. The films annealed at 750 °C show a remarkable remnant polarization of Pr = 45.0 μC/cm2, with a coercive field of 32 kV/cm. The temperature dependence of the spontaneous polarization of the 0.5BZT–0.5BCT film reveals a mean field behavior of the polarization and the fatigue study reveals that Pr only decreases 3% after passing 109 cycles. Therefore the high remnant polarization and its high Pr stability make these films as promising candidates for memory applications
Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract UID/FIS/04650/2013; (ii) Project Norte-070124-FEDER-000070 Nanomateriais Multifuncionais. The author J.P.B.S. is grateful for financial support through the FCT Grant SFRH/BPD/92896/2013. The authors acknowledge the CERIC-ERIC Consortium for access to experimental facilities and financial support under proposal CERIC-ERIC-20167010. The author K.C. Sekhar acknowledge UGC and DST-SERB, Govt. of India for the funds through the grant no. F.4-5(59-FRP/2014(BSR)) and ECR/2017/000068
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