Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

MLA

Indu Sarangadharan, et al. “Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum.” Analytical Chemistry, vol. 91, Apr. 2019, pp. 5953–60. EBSCOhost, https://doi.org/10.1021/acs.analchem.9b00353.

APA

Indu Sarangadharan, Yu-Lin Wang, Shin Li Wang, Gwo-Bin Lee, Geng Yen Lee, Tse Yu Tai, Anil Kumar Pulikkathodi, Anirban Sinha, Shu Chu Shiesh, & Jen-Inn Chyi. (2019). Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum. Analytical Chemistry, 91, 5953–5960. https://doi.org/10.1021/acs.analchem.9b00353

Chicago

Indu Sarangadharan, Yu-Lin Wang, Shin Li Wang, Gwo-Bin Lee, Geng Yen Lee, Tse Yu Tai, Anil Kumar Pulikkathodi, Anirban Sinha, Shu Chu Shiesh, and Jen-Inn Chyi. 2019. “Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum.” Analytical Chemistry 91 (April): 5953–60. doi:10.1021/acs.analchem.9b00353.