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AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
- Source :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2011, 98 (26), pp.261106. ⟨10.1063/1.3605592⟩, Applied Physics Letters, 2011, 98 (26), pp.261106. ⟨10.1063/1.3605592⟩
- Publication Year :
- 2011
- Publisher :
- HAL CCSD, 2011.
-
Abstract
- International audience; An original method to fabricate III-nitride photonic crystal membranes without etching of III-N materials is reported. A photonic crystal pattern is first realized in a silicon substrate. GaN quantum dots embedded in a thin AlN layer are then grown by conformal epitaxy using ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic crystal. Room temperature microphotoluminescence measurements show a quality factor as high as 1800 at 425 nm on a modified L3 cavity. Possibility to achieve lasing with this system is discussed.
- Subjects :
- 010302 applied physics
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
Hybrid silicon laser
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
chemistry
Etching (microfabrication)
0103 physical sciences
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
0210 nano-technology
business
Layer (electronics)
Photonic crystal
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2011, 98 (26), pp.261106. ⟨10.1063/1.3605592⟩, Applied Physics Letters, 2011, 98 (26), pp.261106. ⟨10.1063/1.3605592⟩
- Accession number :
- edsair.doi.dedup.....19abc56a204f605a09c5fa17e3b866a3