Tight binding calculations for the optical properties of ellipsoidal silicon nanocrystals

Silicon ellipsoidal nanocrystals have been studied within a Tight Binding approximation. Transition energies and optical properties have been analyzed varying the shape and the number of atoms of the structures. We have investigated how the polarization of the absorbed radiation depends on the geometrical anisotropy. Our results can give a useful contribution in explaining recent measurements of polarized light emission from porous silicon and may give new insights on the silicon nanostructure physics. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)