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Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays
- Source :
- Proceedings, Vol 14, Iss 1, p 43 (2019)
- Publication Year :
- 2019
- Publisher :
- MDPI AG, 2019.
-
Abstract
- III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]
Details
- Language :
- English
- ISSN :
- 25043900
- Volume :
- 14
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Proceedings
- Accession number :
- edsair.doi.dedup.....18b95478543942b5bfba5398cb4a2b7b