Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by metalorganic chemical vapor deposition have been studied. Certain features of the 1/f noise have been revealed in these short-gate transistors. The low-frequency noise spectra show drastically different behavior depending on the gate voltage V-G in the range of low (V(Gt)less than or equal toV(G)less than or equal to0) and high (V-G