Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires

Authors :: Massimo Longo
O. Salicio
Enzo Rotunno
Marco Fanciulli
Claudia Wiemer
Roberto Fallica
Laura Lazzarini
Longo, M
Fallica, R
Wiemer, C
Salicio, O
Fanciulli, M
Rotunno, E
Lazzarini, L
Source :: Nano letters, 12 (2012): 1509–1515. doi:10.1021/nl204301h, info:cnr-pdr/source/autori:Massimo Longo; Roberto Fallica; Claudia Wiemer; Olivier Salicio; Marco Fanciulli; Enzo Rotunno; Laura Lazzarini/titolo:Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires/doi:10.1021%2Fnl204301h/rivista:Nano letters (Print)/anno:2012/pagina_da:1509/pagina_a:1515/intervallo_pagine:1509–1515/volume:12
Publication Year :: 2012
Publisher :: American Chemical Society, 2012.
Abstract: The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

Language :: English
Database :: OpenAIRE
Journal :: Nano letters, 12 (2012): 1509–1515. doi:10.1021/nl204301h, info:cnr-pdr/source/autori:Massimo Longo; Roberto Fallica; Claudia Wiemer; Olivier Salicio; Marco Fanciulli; Enzo Rotunno; Laura Lazzarini/titolo:Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires/doi:10.1021%2Fnl204301h/rivista:Nano letters (Print)/anno:2012/pagina_da:1509/pagina_a:1515/intervallo_pagine:1509–1515/volume:12
Accession number :: edsair.doi.dedup.....185d5cd544b1229ba74b9e7bd8a2cd03
Full Text :: https://doi.org/10.1021/nl204301h