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Cryogenic Silicon Detectors with Implanted Contacts for the Detection of Visible Photons Using the Neganov-Trofimov-Luke Effect

Authors :
C. Bruhn
A. Langenkämper
X. Defay
M. Chapellier
J.-C. Lanfranchi
F. Hitzler
H. Steiger
A. Münster
A. Zöller
S. Wawoczny
E. Mondragon
S. Schönert
M. Willers
W. Potzel
Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM PS1)
Université Paris-Saclay-Univ. Paris-Sud-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)
Source :
Journal of low temperature physics, 16th International Workshop on Low Temperature Particle Detection (LTD), 16th International Workshop on Low Temperature Particle Detection (LTD), Jul 2015, GRENOBLE, France. ⟨10.1007/s10909-016-1534-8⟩
Publication Year :
2015
Publisher :
HAL CCSD, 2015.

Abstract

There is a common need in astroparticle experiments such as direct dark matter detection, 0{\nu}\b{eta}\b{eta} (double beta decay without emission of neutrinos) and Coherent Neutrino Nucleus Scattering experiments for light detectors with a very low energy threshold. By employing the Neganov-Luke Effect, the thermal signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures, can be amplified by drifting the photogenerated electrons and holes in an electric field. This technology is not used in current experiments, in particular because of a reduction of the signal amplitude with time which is due to trapping of the charges within the absorber. We present here the first results of a novel type of Neganov-Luke Effect detector with an electric field configuration designed to improve the charge collection within the semiconductor.<br />Comment: 6 pages, 5 figures, submitted to Journal of Low Temperature Physics

Details

Language :
English
Database :
OpenAIRE
Journal :
Journal of low temperature physics, 16th International Workshop on Low Temperature Particle Detection (LTD), 16th International Workshop on Low Temperature Particle Detection (LTD), Jul 2015, GRENOBLE, France. ⟨10.1007/s10909-016-1534-8⟩
Accession number :
edsair.doi.dedup.....184eb0b8a4d494327d8c15e52d331793
Full Text :
https://doi.org/10.1007/s10909-016-1534-8⟩