Area-Selective Growth of Aligned ZnO Nanorod Arrays for MEMS Device Applications

ZnO nanorods (NRs) arrays with good vertical alignment were selectively grown on microscale patterned surfaces by a MEMS-compatible, low-temperature chemical-bath deposition method (CBD). The direct-current (DC) sputtered and subsequently annealed ZnO seed-layer was found to have a crucial effect on the ZnO NRs growth. Depending on the pre-annealing temperature between 200 °C and 700 °C, which is compatible with our microcantilever fabrication process, diameters and area densities of the NRs of 60–99 nm and 17–27 µm−2 were observed, respectively, with the best alignment at 600 °C. A surface-area enlargement factor of 48 was achieved with respect to a ZnO layer indicating the potential of ZnO NRs arrays for MEMS applications, such as gas sensing.