Modification of GaAs surface by low-current Townsend discharge

Authors :: L. M. Portsel
S. Kittel
V A Tolmachev
A V Ankudinov
Evgeny L. Gurevich
Yu. A. Astrov
A. N. Lodygin
Roland Hergenröder
Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V.
A.F. Ioffe Physical-Technical Institute
Russian Academy of Sciences [Moscow] (RAS)
Source :: Journal of Physics D: Applied Physics, Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (27), pp.275302. ⟨10.1088/0022-3727/43/27/275302⟩
Publication Year :: 2010
Publisher :: HAL CCSD, 2010.
Abstract: The influence of stationary spatially homogeneous Townsend discharge on the (1 0 0) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in a nitrogen discharge at a current density j = 60 µ Ac m −2 are studied by means of x-ray photoelectron spectroscopy, ellipsometry and atomic force microscopy. It is shown that an exposure to low-energy ions (

Language :: English
ISSN :: 00223727 and 13616463
Database :: OpenAIRE
Journal :: Journal of Physics D: Applied Physics, Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (27), pp.275302. ⟨10.1088/0022-3727/43/27/275302⟩
Accession number :: edsair.doi.dedup.....174220fe95f59ddb1fa290e6a14684ad
Full Text :: https://doi.org/10.1088/0022-3727/43/27/275302⟩