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Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
- Publication Year :
- 2020
- Publisher :
- arXiv, 2020.
-
Abstract
- A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design
- Subjects :
- FOS: Physical sciences
Physics - Applied Physics
Applied Physics (physics.app-ph)
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....1713684a2192aeb6e5dc966cd0b82f2b
- Full Text :
- https://doi.org/10.48550/arxiv.2009.01768