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Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs

Authors :
Emmanuel Vincent
Alain Bravaix
Nathalie Revil
Didier Goguenheim
Yncréa Méditerrané
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP)
Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
STMicroelectronics [Crolles] (ST-CROLLES)
Source :
Microelectronics Reliability, Microelectronics Reliability, 2001, Microelectronics Reliability, 41 (9-10), pp.1313-1318. ⟨10.1016/S0026-2714(01)00206-2⟩
Publication Year :
2001
Publisher :
Elsevier BV, 2001.

Abstract

International audience; The effects of the substrate voltage are studied in advanced N-MOSFETs with a 3.2m gate-oxide thickness used for logic applications. Results show that the electronic gate current originates at low voltage from tunneling contributions and from the first-induced second impact ionization mechanisms. The injection efficiency is found to be channel-length dependent through a large increase in the gate-current with the increase in the lateral field (vertical field) and the electron-electron scattering for low-energy hot-carriers. Lifetime prediction techniques are compared showing a strong device lifetime reduction with the back bias at VSB = VDD independently of the extrapolating model which can be modeled by the measurement of the gate-current and the emission probability.

Details

ISSN :
00262714
Volume :
41
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi.dedup.....162fd4b774e3311adbd500c077465b7e