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Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)
- Source :
- APL Materials, Vol 7, Iss 10, Pp 101113-101113-6 (2019), APL Materials
- Publication Year :
- 2019
- Publisher :
- AIP Publishing LLC, 2019.
-
Abstract
- The ZrSiS family of compounds has garnered interest as Dirac nodal-line semimetals and offers an approach to study structural motifs coupled with electronic features, such as Dirac crossings. CeSbTe, of the ZrSiS/PbFCl structure type, is of interest due to its magnetically tunable topological states. The crystal structure consists of rare earth capped square nets separating the magnetic Ce–Te layers. In this work, we report the single crystal growth, magnetic properties, and electronic structures of LnSb1−xBixTe (Ln = La, Ce, Pr; x ∼ 0.2) and CeBiTe, adopting the CeSbTe crystal structure, and the implication of tuning the electronic properties by chemical substitution.
- Subjects :
- 010302 applied physics
Materials science
Single crystal growth
lcsh:Biotechnology
Dirac (software)
Rare earth
General Engineering
02 engineering and technology
Crystal structure
Structure type
021001 nanoscience & nanotechnology
01 natural sciences
Semimetal
lcsh:QC1-999
Crystallography
lcsh:TP248.13-248.65
0103 physical sciences
General Materials Science
0210 nano-technology
Electronic band structure
lcsh:Physics
Electronic properties
Subjects
Details
- Language :
- English
- Volume :
- 7
- Issue :
- 10
- Database :
- OpenAIRE
- Journal :
- APL Materials
- Accession number :
- edsair.doi.dedup.....1406e0125c6c74c52183b833db49e33a