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Dark excitons in transition metal dichalcogenides
- Source :
- Physical Review Materials, Physical Review Materials vol.2(2018)
- Publication Year :
- 2018
-
Abstract
- Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative position of these dark states with respect to the optically accessible bright excitons has a crucial impact on the emission efficiency of these materials and thus on their technological potential. Based on the solution of the Wannier equation, we present the excitonic landscape of the most studied TMD materials including the spectral position of momentum- and spin-forbidden excitonic states. We show that the knowledge of the electronic dispersion does not allow to conclude about the nature of the material's band gap, since excitonic effects can give rise to significant changes. Furthermore, we reveal that an exponentially reduced photoluminescence yield does not necessarily reflect a transition from a direct to a non-direct gap material, but can be ascribed in most cases to a change of the relative spectral distance between bright and dark excitonic states.
- Subjects :
- Condensed Matter - Materials Science
Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Band gap
Atom and Molecular Physics and Optics
Exciton
Momentum transfer
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Wannier equation
02 engineering and technology
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Momentum
Condensed Matter::Materials Science
0103 physical sciences
Coulomb
General Materials Science
010306 general physics
0210 nano-technology
Electronic band structure
Subjects
Details
- ISSN :
- 24759953
- Database :
- OpenAIRE
- Journal :
- Physical Review Materials
- Accession number :
- edsair.doi.dedup.....13cf2cc51359d88ff47947b00b697da1
- Full Text :
- https://doi.org/10.1103/PhysRevMaterials.2.014002