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Experimental Study of Uniaxial-Stress Effects on DC Characteristics of nMOSFETs
- Source :
- IEEE Transactions on Components and Packaging Technologies. 33:278-286
- Publication Year :
- 2010
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2010.
-
Abstract
- Stress-induced shifts of the direct current characteristics on n-type metal oxide semiconductor field effect transistors (nMOSFETs) were investigated experimentally. The stress sensitivities of nMOSFET characteristics were measured by the 4-point bending method, and the gate-length dependence of transconductance shifts caused by uniaxial stress was evaluated. As a result, it is shown that the gate-length dependence of transconductance shifts is attributed to parasitic resistance of the nMOSFETs. Also, this paper verified the electron-mobility model proposed in the previous study that includes stress effects in comparison with the experimental results. As a result, several improvements for the electron-mobility model are proposed in this paper. We describe the change of the conduction-band energy induced by the shear deformation of silicon. The shear deformation with a uniaxial stress along the direction of silicon should be considered in the change of the conduction-band energy.
- Subjects :
- Electron mobility
Materials science
parasitic resistance
Transconductance
Deformation potential
residual stress
Bending
n-type metal oxide semiconductor field effect transistors (nMOSFETs)
Electronic, Optical and Magnetic Materials
Stress (mechanics)
Residual stress
MOSFET
Parasitic element
Electronic engineering
Field-effect transistor
Electrical and Electronic Engineering
Composite material
electron mobility
Subjects
Details
- ISSN :
- 15579972 and 15213331
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Components and Packaging Technologies
- Accession number :
- edsair.doi.dedup.....136ad09a1cc93dac04b98aa4a0032b7d