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Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy

Authors :
I. P. Krug
Andres Cano
Mario Hentschel
Daniel M. Gottlob
Zewu Yan
Edith Bourret
Jakob Schaab
Ramamoorthy Ramesh
Claus M. Schneider
Hatice Doğanay
Dennis Meier
F. Nickel
Department of Materials
Institut für Optik und Atomare Physik
Technische Universität Berlin (TU)
Forschungszentrum Jülich Peter Grünberg Institute (PGI-6)
Forschungszentrum Jülich Peter Grünberg Institute
Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB)
Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université de Bordeaux (UB)
Materials Science Division [LBNL Berkeley]
Lawrence Berkeley National Laboratory [Berkeley] (LBNL)
4th Physics Institute and Research Center SCoPE
University of Stuttgart
Department of Materials Science and Engineering [Berkeley]
Source :
Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2014, 104 (23), 232904 (4 p.). ⟨10.1063/1.4879260⟩, Applied physics letters 104(23), 232904-(2014). doi:10.1063/1.4879260
Publication Year :
2014
Publisher :
HAL CCSD, 2014.

Abstract

International audience; High-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established method for imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEM and demonstrate its capability for imaging and investigating domain walls in ferroelectrics with high-spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls can be visualized based on photo-induced charging effects and local variations in their electronic conductance can be mapped by analyzing the energy distribution of photoelectrons. Our results open the door for non-destructive, contract-free, and element-specific studies of the electronic and chemical structure at domain walls in ferroelectrics.

Details

Language :
English
ISSN :
00036951
Database :
OpenAIRE
Journal :
Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2014, 104 (23), 232904 (4 p.). ⟨10.1063/1.4879260⟩, Applied physics letters 104(23), 232904-(2014). doi:10.1063/1.4879260
Accession number :
edsair.doi.dedup.....12cc57b79df760cc1af15804b9d996f0