Recent advances in high-resolution X-ray diffractometry applied to nanostructured oxide thin films: The case of yttria stabilized zirconia epitaxially grown on sapphire

The investigation of nanostructured oxide thin films using high-resolution X-ray diffraction (XRD) is considered. Because of the small amount of matter deposited and significant defect densities, such oxide thin film structures can be considered as imperfect materials that require specific data acquisition and data analysis methods. Fast reciprocal space mapping is carried out using a diffractometer based on an 18 kW X-ray source, a four-reflection monochromator and a curved position sensitive detector. In order to extract quantitative information concerning the microstructure of the films, an approach is developed that combines a microscopic modelling of dimensional effects (crystallite or island shape, size and size distribution) with a phenomenological description of lattice disorder. Within this approach, simple analytical expressions or expressions implying a simple Fourier transform, can be derived for the XRD intensity distribution in the direction perpendicular to the film surface and parallel to it. Profiles exhibiting damped and/or broadened fringes and profiles exhibiting a two-component line shape can be simulated. Parameters of primary interest, such as the island thickness, thickness distribution function, island in-plane dimensions and the distribution function of the dimensions, the level of disorder, the disorder correlation length and the spatial distribution of disorder, can be extracted. The applicability of the model is illustrated with yttria stabilized zirconia films epitaxially grown on sapphire by sol–gel dip-coating.