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Magnetic-field-induced insulator-metal transition in W-doped VO2 at 500 T
- Source :
- Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
- Publication Year :
- 2020
- Publisher :
- arXiv, 2020.
-
Abstract
- Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has been debated whether electronic correlation or the structural instability due to dimerised V ions is the more essential driving force behind this MI transition. Here, we show that an ultrahigh magnetic field of 500 T renders the insulator phase of tungsten (W)-doped VO2 metallic. The spin Zeeman effect on the d electrons of the V ions dissociates the dimers in the insulating phase, resulting in the delocalisation of electrons. Because the Mott-Hubbard gap essentially does not depend on the spin degree of freedom, the structural instability is likely to be the more essential driving force behind the MI transition.<br />Comment: 9 pages, 9 figures (including the supplementary information)
- Subjects :
- Materials science
Science
General Physics and Astronomy
chemistry.chemical_element
FOS: Physical sciences
02 engineering and technology
Electron
Tungsten
01 natural sciences
Instability
General Biochemistry, Genetics and Molecular Biology
Ion
symbols.namesake
Condensed Matter - Strongly Correlated Electrons
0103 physical sciences
lcsh:Science
010306 general physics
Condensed Matter::Quantum Gases
Multidisciplinary
Zeeman effect
Electronic correlation
Condensed matter physics
Strongly Correlated Electrons (cond-mat.str-el)
Doping
General Chemistry
021001 nanoscience & nanotechnology
Magnetic field
chemistry
symbols
lcsh:Q
Condensed Matter::Strongly Correlated Electrons
0210 nano-technology
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
- Accession number :
- edsair.doi.dedup.....11f8fb7db87cbd8291c30a37ae1efb9c
- Full Text :
- https://doi.org/10.48550/arxiv.2001.08580