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Electrical spin injection and detection in lateral all-semiconductor devices
- Publication Year :
- 2009
-
Abstract
- Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%.<br />11 pages, 3 figures, sent to PRL
- Subjects :
- Physics
Condensed Matter - Materials Science
Spin pumping
Spin polarization
Condensed matter physics
Spintronics
ddc:530
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Electron
Magnetic semiconductor
Semiconductor device
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
530 Physik
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Ferromagnetism
Condensed Matter::Strongly Correlated Electrons
Quantum tunnelling
Subjects
Details
- Language :
- German
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....110c57759a05bd08e952b662d10456a4