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Simulating the horizontal growth process of silicon ribbon
- Source :
- AIP Advances, Vol 8, Iss 8, Pp 085307-085307-13 (2018)
- Publication Year :
- 2018
- Publisher :
- AIP Publishing LLC, 2018.
-
Abstract
- In this paper, we present a solidification growth model that primarily describes the principal components of horizontal ribbon growth process, but also discusses the interaction between fluid flow and heat transfer, crystallization dynamics, and the effects of oxygen impurity distribution in melts, particularly with respect to the morphology of the interface. The effects of the jet cooling rate, pulling speed, and transfer coefficient on solute transport were studied. The results showed that a higher jet velocity produces a sharper temperature gradient at the interface and a stronger Marangoni effect, facilitates solute transport in the silicon melt, and promotes higher oxygen concentration in crystal. The stronger Marangoni convection causes more rapid oxygen transfer in the silicon melt and a higher oxygen concentration. Solidification front increases the downward flow velocity of the eddy current as the pulling speed is increased; this leads to a decrease in solute concentration at the interface. An increase in the downward flow of the vortex confluence facilitates the reduction of solute concentration in the crystal. An increase in the upward flow of the vortex confluence will increase the concentration in the crystal. The oxygen concentration is concentrated at the top and bottom of the silicon ribbon.
- Subjects :
- 010302 applied physics
Convection
Materials science
Marangoni effect
Silicon
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
Mechanics
021001 nanoscience & nanotechnology
01 natural sciences
lcsh:QC1-999
Vortex
law.invention
Physics::Fluid Dynamics
Flow velocity
chemistry
law
Condensed Matter::Superconductivity
0103 physical sciences
Heat transfer
Limiting oxygen concentration
Crystallization
0210 nano-technology
lcsh:Physics
Subjects
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 8
- Issue :
- 8
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....108fe97c910edd99a636fceed9571d02