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Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices
- Source :
- International Journal of High Speed Electronics and Systems. 27:1840009
- Publication Year :
- 2018
- Publisher :
- World Scientific Pub Co Pte Lt, 2018.
-
Abstract
- Chirped superlattices are of interest as buffer layers in metamorphic semiconductor device structures, because they can combine the mismatch accommodating properties of compositionally-graded layers with the dislocation filtering properties of superlattices. Important practical aspects of the chirped superlattice as a buffer layer are the surface strain and surface in-plane lattice constant. In this work two basic types of InGaAs/GaAs chirped superlattice buffers have been studied. In design I (composition modulated), the average composition is varied by modulating the composition of one of the two layers in the superlattice period, but the individual layer thicknesses were fixed. In design II (thickness modulated), the individual layer thicknesses were modulated, but the compositions were fixed. In this paper the surface strain and surface in-plane lattice constant for these chirped superlattices are presented as functions of the top composition and period for each of these basic designs.
- Subjects :
- Work (thermodynamics)
Materials science
Superlattice
chemistry.chemical_element
02 engineering and technology
01 natural sciences
Buffer (optical fiber)
Condensed Matter::Materials Science
Optics
Lattice constant
0103 physical sciences
Electrical and Electronic Engineering
010302 applied physics
Strain (chemistry)
business.industry
Semiconductor device
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Electronic, Optical and Magnetic Materials
chemistry
Hardware and Architecture
Optoelectronics
Dislocation
0210 nano-technology
business
Layer (electronics)
Indium
Subjects
Details
- ISSN :
- 17936438 and 01291564
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- International Journal of High Speed Electronics and Systems
- Accession number :
- edsair.doi.dedup.....0f98aed512a0328c937cde22bef62244