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Role of activation energy in resistance drift of amorphous phase change materials
- Source :
- Frontiers in Physics, Vol 2 (2014)
- Publication Year :
- 2014
- Publisher :
- Frontiers Media SA, 2014.
-
Abstract
- The time evolution of the resistance of amorphous thin films of the phase change materials Ge2Sb2Te5, GeTe and AgIn-Sb2Te is measured during annealing at T = 80°C. The annealing process is interrupted by several fast temperature dips to determine the changing temperature dependence of the resistance. This procedure enables us to identify to what extent the resistance increase over time can be traced back to an increase in activation energy EA or to a rise of the prefactor R*. We observe that, depending on the material, the dominating contribution to the increase in resistance during annealing can be either a change in activation energy (Ge2Sb2Te5) or a change in prefactor (AgIn-Sb2Te). In the case of GeTe, both contribute about equally. We conclude that any phenomenological model for the resistance drift in amorphous phase change materials that is based on the increase of one parameter alone (e.g., the activation energy) cannot claim general validity.
- Subjects :
- AgInSbTe
Materials science
Annealing (metallurgy)
Materials Science (miscellaneous)
Biophysics
General Physics and Astronomy
Activation energy
GeSbTe
chemistry.chemical_compound
Phenomenological model
amorphous semiconductors
Physical and Theoretical Chemistry
Thin film
Mathematical Physics
Condensed matter physics
Physics
Time evolution
thermally activated electrical transport
resistance drift
GeTe
lcsh:QC1-999
Resistive memories
Amorphous solid
chemistry
phase change materials
chalcogenides
lcsh:Physics
Subjects
Details
- ISSN :
- 2296424X
- Volume :
- 2
- Database :
- OpenAIRE
- Journal :
- Frontiers in Physics
- Accession number :
- edsair.doi.dedup.....0f42c54e748bd087b7c1b2211fb6a94b