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Solid-state dewetting of single-crystal silicon on insulator: effect of annealing temperature and patch size
- Source :
- Microelectronic Engineering, Microelectronic Engineering, Elsevier, 2018, 190, pp.1--6. 〈10.1016/j.mee.2018.01.002〉, Microelectronic Engineering, Elsevier, 2018, 190, pp.1--6. ⟨10.1016/j.mee.2018.01.002⟩, Microelectronic Engineering, 2018, 190, pp.1--6. ⟨10.1016/j.mee.2018.01.002⟩, Microelectronic engineering 190 (2018): 1–6. doi:10.1016/j.mee.2018.01.002, info:cnr-pdr/source/autori:Abbarchi, Marco; Naffouti, Meher; Lodari, Mario; Salvalaglio, Marco; Backofen, Rainer; Bottein, Thomas; Voigt, Axel; David, Thomas; Claude, Jean-Benoit; Bouabdellaoui, Mohammed; Benkouider, Abdelmalek; Fraj, Ibtissem; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Grosso, David; Bollani, Monica/titolo:Solid-state dewetting of single-crystal silicon on insulator: effect of annealing temperature and patch size/doi:10.1016%2Fj.mee.2018.01.002/rivista:Microelectronic engineering/anno:2018/pagina_da:1/pagina_a:6/intervallo_pagine:1–6/volume:190
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- We address the solid state dewetting of ultra-thin and ultra-large patches of monocrystalline silicon on insulator. We show that the underlying instability of the thin Si film under annealing can be perfectly controlled to form monocrystalline, complex nanoarchitectures extending over several microns. These complex patterns are obtained guiding the dewetting fronts by etching ad-hoc patches prior to annealing. They can be reproduced over hundreds of repetitions extending over hundreds of microns. We discuss the effect of annealing temperature and patch size on the stability of the final result of dewetting showing that for simple patches (e.g. simple squares) the final outcome is stable and well reproducible at 720 degrees C and for similar to 1 mu m square size. Finally, we demonstrate that introducing additional features within squared patches (e.g. a hole within a square) stabilises the dewetting dynamic providing perfectly reproducible complex nanoarchitectures of 5 pm size. (C) 2018 Elsevier B.V. All rights reserved.
- Subjects :
- Materials science
Annealing (metallurgy)
Solid-state
Insulator (electricity)
02 engineering and technology
01 natural sciences
Instability
Square (algebra)
Monocrystalline silicon
0103 physical sciences
Single crystal silicon
Dewetting
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Nano-patterning
Electrical and Electronic Engineering
010306 general physics
Condensed matter physics
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Ultra-thin silicon on insulator
0210 nano-technology
[ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
Solid-state dewetting
Subjects
Details
- ISSN :
- 01679317 and 18735568
- Volume :
- 190
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi.dedup.....0ec174ef75b7e16379b484fbb270182b